Naprej: Splosne lastnosti

Transistorji SIPMOS: Pregled delovanja in uporabe

Leon Kos
Univerza v Ljubljani
Fakulteta za elektrotehniko in racunalnistvo
4. letnik Avtomatike - Robotika

16. september 1995

Abstract:

On SIPMOS transistors: A Survey Tracking down the roots of SIPMOS transistors is easy. Siemens-Power-Metal-Oxide-Semiconductors were first FET transistors with high switching power[1]. Their characteristics are discussed, together wit their quality, reliability and precautions necessary for succesfull circuit design. Other devices on SIPMOS technology such as IGBTs (Insulated Gate Bipolar Transistors), small signal transistors[2,3], depletion transistors and smart SIPMOS (PROFET) are also discussed[4]. Finaly a selection of applications is given to emphasize presented technology.

Povzetek:

Transistorji SIPMOS (Siemens-Power-Metal-Oxide-Semiconductor) so bili prvi transistorji FET z vecjimi stikalnimi mocmi[1]. Mocnostni transistorji SIPMOS omogocajo mnozico novih resitev z lastnostmi kot so temperaturna neobcutljivost, visoka stikalna hitrost, majhna energija za krmiljenje in robustnost. Na tehnologiji SIPMOS so se razvili tudi polprevodniki, kot so transistorji IGBT (Insulated Gate Bipolar Transistor), signalni transistorji malih moci, PROFET (Smart SIPMOS)[2,3], m-FET-i in AC stikala SITAC[4].

Poznavanje nastetih komponent je pogoj za za uspesno konstruiranje vezij. V prispevku so prikazane lastnosti, principi delovanja, osnovni podatki in nekatere aplikacije, ki kazejo prednost uporabe predstavljene tehnologije.

Leon Kos
Tue Nov 21 11:30:25 GMT+0100 1995